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| JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER 2SB1548 VCBO Collector-base voltage 2SB1548A 2SB1548 VCEO Collector-emitter voltage 2SB1548A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB1548 IC=-30mA ; IB=0 2SB1548A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V 2SB1548 2SB1548A 2SB1548 2SB1548A VCB=-60V; IE=0 CONDITIONS 2SB1548 2SB1548A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICBO Collector cut-off current -200 VCB=-80V; IE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 70 10 30 -1 250 |I |I A ICEO Collector cut-off current A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-1.0A IB1=-IB2=-0.1A 0.5 1.2 0.3 |I |I |I s s s hFE-1 Classifications Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1548 2SB1548A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A 4 |
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